TK8Q65W,S1Q
Part NoTK8Q65W,S1Q
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 650V 7.8A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C7.8A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)670mOhm @ 3.9A, 10V
RdsOn(Max)@Id3.5V @ 300µA
Vgs16 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)570 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature80W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-Pak
SupplierDevicePackageTO-251-3 Stub Leads, IPak
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2630
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6665 | |
| 10 | 1.6332 | |
| 100 | 1.5832 | |
| 1000 | 1.5332 | |
| 10000 | 1.4665 |
Associated Product
