TK9A90E,S4X
Part NoTK9A90E,S4X
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 900V 9A TO220SIS
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Seriesπ-MOSVIII
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)900 V
Current-ContinuousDrain(Id)@25°C9A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.3Ohm @ 4.5A, 10V
RdsOn(Max)@Id4V @ 900µA
Vgs46 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4594
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1087 | |
| 10 | 2.0665 | |
| 100 | 2.0033 | |
| 1000 | 1.94 | |
| 10000 | 1.8557 |
Associated Product
