TPH8R808QM,LQ
Part NoTPH8R808QM,LQ
ManufacturerToshiba Semiconductor and Storage
Description80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesU-MOSX-H
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C79A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 26A, 10V
Vgs(th) (Max) @ Id3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 40 V
FET Feature-
Power Dissipation (Max)3W (Ta), 109W (Tc)
Operating Temperature175°C
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5.75)
Package / Case8-PowerTDFN
In Stock:
2061
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.83 | |
| 10 | 0.813 | |
| 100 | 0.79 | |
| 1000 | 0.76 | |
| 10000 | 0.73 |
Associated Product
