TPN2010FNH,L1Q
Part NoTPN2010FNH,L1Q
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 250V 5.6A 8TSON
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C5.6A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)198mOhm @ 2.8A, 10V
RdsOn(Max)@Id4V @ 200µA
Vgs7 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)600 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW (Ta), 39W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-TSON Advance (3.1x3.1)
SupplierDevicePackage8-PowerVDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4801
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.49 | |
| 10 | 1.4602 | |
| 100 | 1.4155 | |
| 1000 | 1.3708 | |
| 10000 | 1.3112 |
Associated Product
