TPN22006NH,LQ
Part NoTPN22006NH,LQ
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 60V 9A 8TSON
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C9A (Ta)
DriveVoltage(MaxRdsOn6.5V, 10V
MinRdsOn)22mOhm @ 4.5A, 10V
RdsOn(Max)@Id4V @ 100µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)710 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW (Ta), 18W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-TSON Advance (3.3x3.3)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
Qualification
In Stock:
2544
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0488 | |
| 10 | 1.0278 | |
| 100 | 0.9964 | |
| 1000 | 0.9649 | |
| 10000 | 0.9229 |
Associated Product
