TPN22006NH,LQ
RoHS

TPN22006NH,LQ

Part NoTPN22006NH,LQ
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 60V 9A 8TSON
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ECAD Module TPN22006NH,LQ
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C9A (Ta)
DriveVoltage(MaxRdsOn6.5V, 10V
MinRdsOn)22mOhm @ 4.5A, 10V
RdsOn(Max)@Id4V @ 100µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)710 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW (Ta), 18W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-TSON Advance (3.3x3.3)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
Qualification
In Stock: 2544
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0488
10 1.0278
100 0.9964
1000 0.9649
10000 0.9229
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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