TPW5200FNH,L1Q
Part NoTPW5200FNH,L1Q
ManufacturerTOSHIBA
DescriptionPB-F POWER MOSFET TRANSISTOR DSO
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)52mOhm @ 13A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds800mW (Ta), 142W (Tc)
FETFeature150°C
PowerDissipation(Max)Surface Mount
OperatingTemperature8-DSOP Advance
MountingType8-PowerWDFN
SupplierDevicePackage2200 pF @ 100 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3079
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2144 | |
| 10 | 3.1501 | |
| 100 | 3.0537 | |
| 1000 | 2.9572 | |
| 10000 | 2.8287 |
Associated Product
