TW015N65C,S1F
Part NoTW015N65C,S1F
ManufacturerTOSHIBA
DescriptionG3 650V SIC-MOSFET TO-247 15MOH
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)21mOhm @ 50A, 18V
RdsOn(Max)@Id5V @ 11.7mA
Vgs128 nC @ 18 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)4850 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature342W (Tc)
PowerDissipation(Max)175°C
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3207
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 57.5964 | |
| 10 | 56.4445 | |
| 100 | 54.7166 | |
| 1000 | 52.9887 | |
| 10000 | 50.6848 |
Associated Product
