TW015Z120C,S1F
Part NoTW015Z120C,S1F
ManufacturerTOSHIBA
DescriptionG3 1200V SIC-MOSFET TO-247-4L 1
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)21mOhm @ 50A, 18V
RdsOn(Max)@Id5V @ 11.7mA
Vgs158 nC @ 18 V
Vgs(th)(Max)@Id6000 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds431W (Tc)
FETFeature175°C
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L(X)
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -10V
Grade
Qualification
In Stock:
13016
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 67.463 | |
| 10 | 66.1137 | |
| 100 | 64.0898 | |
| 1000 | 62.066 | |
| 10000 | 59.3674 |
Associated Product
