TW015Z65C,S1F
Part NoTW015Z65C,S1F
ManufacturerTOSHIBA
DescriptionG3 650V SIC-MOSFET TO-247-4L 15
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)22mOhm @ 50A, 18V
RdsOn(Max)@Id5V @ 11.7mA
Vgs128 nC @ 18 V
Vgs(th)(Max)@Id4850 pF @ 400 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds342W (Tc)
FETFeature175°C
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L(X)
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -10V
Grade
Qualification
In Stock:
16765
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 57.1077 | |
| 10 | 55.9655 | |
| 100 | 54.2523 | |
| 1000 | 52.5391 | |
| 10000 | 50.2548 |
Associated Product
