TW027Z65C,S1F
Part NoTW027Z65C,S1F
ManufacturerTOSHIBA
DescriptionG3 650V SIC-MOSFET TO-247-4L 27
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)38mOhm @ 29A, 18V
RdsOn(Max)@Id5V @ 3mA
Vgs65 nC @ 18 V
Vgs(th)(Max)@Id2288 pF @ 400 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds156W (Tc)
FETFeature175°C
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L(X)
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -10V
Grade
Qualification
In Stock:
14493
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.0673 | |
| 10 | 19.666 | |
| 100 | 19.0639 | |
| 1000 | 18.4619 | |
| 10000 | 17.6592 |
Associated Product
