TW030N120C,S1F
Part NoTW030N120C,S1F
ManufacturerTOSHIBA
DescriptionG3 1200V SIC-MOSFET TO-247 30MO
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)40mOhm @ 30A, 18V
RdsOn(Max)@Id5V @ 13mA
Vgs82 nC @ 18 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)2925 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature249W (Tc)
PowerDissipation(Max)175°C
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4872
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 36.7854 | |
| 10 | 36.0497 | |
| 100 | 34.9461 | |
| 1000 | 33.8426 | |
| 10000 | 32.3712 |
Associated Product
