TW060N120C,S1F
Part NoTW060N120C,S1F
ManufacturerTOSHIBA
DescriptionG3 1200V SIC-MOSFET TO-247 60MO
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C36A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)78mOhm @ 18A, 18V
RdsOn(Max)@Id5V @ 4.2mA
Vgs46 nC @ 18 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1530 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature170W (Tc)
PowerDissipation(Max)175°C
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
4759
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 16.0356 | |
| 10 | 15.7149 | |
| 100 | 15.2338 | |
| 1000 | 14.7528 | |
| 10000 | 14.1113 |
Associated Product
