TW070J120B,S1Q
Part NoTW070J120B,S1Q
ManufacturerTOSHIBA
DescriptionSICFET N-CH 1200V 36A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C36A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)90mOhm @ 18A, 20V
RdsOn(Max)@Id5.8V @ 20mA
Vgs67 nC @ 20 V
Vgs(th)(Max)@Id±25V, -10V
Vgs(Max)1680 pF @ 800 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature272W (Tc)
PowerDissipation(Max)-55°C ~ 175°C
OperatingTemperatureThrough Hole
MountingTypeTO-3P(N)
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3066
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 27.4472 | |
| 10 | 26.8983 | |
| 100 | 26.0748 | |
| 1000 | 25.2514 | |
| 10000 | 24.1535 |
Associated Product
