TW083Z65C,S1F
Part NoTW083Z65C,S1F
ManufacturerTOSHIBA
DescriptionG3 650V SIC-MOSFET TO-247-4L 83
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C30A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)118mOhm @ 15A, 18V
RdsOn(Max)@Id5V @ 600µA
Vgs28 nC @ 18 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)873 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature111W (Tc)
PowerDissipation(Max)175°C
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L(X)
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20570
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.4805 | |
| 10 | 12.2309 | |
| 100 | 11.8565 | |
| 1000 | 11.4821 | |
| 10000 | 10.9828 |
Associated Product
