TP65H035G4WS
Part NoTP65H035G4WS
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 46.5A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSuperGaN™
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C46.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)41mOhm @ 30A, 10V
RdsOn(Max)@Id4.8V @ 1mA
Vgs22 nC @ 0 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1500 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature156W (Tc)
PowerDissipation(Max)-55°C ~ 150°C
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3530
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 14.5314 | |
| 10 | 14.2408 | |
| 100 | 13.8048 | |
| 1000 | 13.3689 | |
| 10000 | 12.7876 |
Associated Product
