TP65H035G4WSQA
Part NoTP65H035G4WSQA
ManufacturerTransphorm
Description650 V 46.5 GAN FET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C47.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)41mOhm @ 30A, 10V
RdsOn(Max)@Id4.8V @ 1mA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1500 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature187W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
4288
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.32 | |
| 10 | 18.9336 | |
| 100 | 18.354 | |
| 1000 | 17.7744 | |
| 10000 | 17.0016 |
Associated Product
