TP65H035WSQA
Part NoTP65H035WSQA
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 47.2A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C47.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)41mOhm @ 32A, 10V
RdsOn(Max)@Id4.5V @ 1mA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1500 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature187W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
3405
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.7196 | |
| 10 | 24.2252 | |
| 100 | 23.4836 | |
| 1000 | 22.742 | |
| 10000 | 21.7532 |
Associated Product
