TP65H050WS
Part NoTP65H050WS
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 34A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C34A (Tc)
DriveVoltage(MaxRdsOn12V
MinRdsOn)60mOhm @ 22A, 10V
RdsOn(Max)@Id4.8V @ 700µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1000 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature119W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7303
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.1962 | |
| 10 | 14.8923 | |
| 100 | 14.4364 | |
| 1000 | 13.9805 | |
| 10000 | 13.3727 |
Associated Product
