TP65H070G4PS
Part NoTP65H070G4PS
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 29A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSuperGaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C29A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)85mOhm @ 18A, 10V
RdsOn(Max)@Id4.7V @ 700µA
Vgs9 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)638 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature96W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
12528
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.034 | |
| 10 | 9.8333 | |
| 100 | 9.5323 | |
| 1000 | 9.2313 | |
| 10000 | 8.8299 |
Associated Product
