TP65H070G4QS-TR
RoHS

TP65H070G4QS-TR

Part NoTP65H070G4QS-TR
ManufacturerTransphorm
Description650 V 29 A GAN FET
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ECAD Module TP65H070G4QS-TR
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device PackageTOLL
Package / Case8-PowerSFN
In Stock: 995
Pricing
QTY UNIT PRICE EXT PRICE
1 8.61
10 8.438
100 8.18
1000 7.92
10000 7.58
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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