TP65H100G4LSGB-TR
Part NoTP65H100G4LSGB-TR
ManufacturerTransphorm
DescriptionHi Volt FETs
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesSuperGaN®
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C18.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.1V @ 1.8mA
Gate Charge (Qg) (Max) @ Vgs14.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds818 pF @ 400 V
FET Feature-
Power Dissipation (Max)65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (8x8)
Package / Case8-VDFN Exposed Pad
Grade-
Qualification-
In Stock:
2136
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.16 | |
| 10 | 6.037 | |
| 100 | 5.85 | |
| 1000 | 5.67 | |
| 10000 | 5.42 |
Associated Product
