TP65H150G4LSG
Part NoTP65H150G4LSG
ManufacturerTransphorm
DescriptionGAN FET N-CH 650V PQFN
Datasheet
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ECAD Module
Specification
PackageCut Tape (CT),Digi-Reel®,Tray
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C13A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 8.5A, 10V
RdsOn(Max)@Id4.8V @ 500µA
Vgs8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)598 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType3-PQFN (8x8)
SupplierDevicePackage3-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6862
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.4528 | |
| 10 | 4.3637 | |
| 100 | 4.2302 | |
| 1000 | 4.0966 | |
| 10000 | 3.9185 |
Associated Product
