TP65H150LSG
Part NoTP65H150LSG
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 15A 3PQFN
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C15A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 10A, 10V
RdsOn(Max)@Id4.8V @ 500µA
Vgs7.1 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)576 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature69W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType3-PQFN (8x8)
SupplierDevicePackage3-PowerDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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4123
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Associated Product
