2SJ363
RoHS

2SJ363

Part No2SJ363
ManufacturerVBsemi
Description-
Datasheet Download Now!
ECAD Module 2SJ363
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mu03a9@10V,7A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250u03bcA
TypePu6c9fu9053
In Stock: 11066
Pricing
QTY UNIT PRICE EXT PRICE
1 0.151
10 0.148
100 0.14
1000 0.14
10000 0.13
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IRF8707TRPBF-1
IRF8707TRPBF-1
Infineon
MOSFET N-CH 30V 11A 8SO
MMFTP5618-Q
MMFTP5618-Q
Diotec Semiconductor
MOSFET, SOT-23, P, -60V, -1.25A
SI7634BDP-T1-E3
SI7634BDP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
TK2P60D(TE16L1,NV)
TK2P60D(TE16L1,NV)
TOSHIBA
MOSFET N-CH 600V 2A PW-MOLD
FDP7030L
FDP7030L
onsemi
MOSFET N-CH 30V 80A TO220-3
NTD60N02R-35G
NTD60N02R-35G
onsemi
MOSFET N-CH 25V 8.5A/32A IPAK
STF25N80K5
STF25N80K5
STMicroelectronics
MOSFET N-CH 800V 19.5A TO220FP