IPB120N06NG
RoHS

IPB120N06NG

Part NoIPB120N06NG
ManufacturerVBsemi
Description-
Datasheet Download Now!
ECAD Module IPB120N06NG
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)-
Continuous Drain Current (Id)-
Drain Source On Resistance (RDS(on)@Vgs,Id)-
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type-
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-
In Stock: 19914
Pricing
QTY UNIT PRICE EXT PRICE
1 0.79
10 0.774
100 0.75
1000 0.73
10000 0.7
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SSM6N7002KFU,LF
SSM6N7002KFU,LF
TOSHIBA
MOSFET 2N-CH 60V 0.3A US6
DMG1013TQ-7
DMG1013TQ-7
Diodes Inc.
MOSFET P-CH 20V 460MA SOT523
PJQ5466A1_R2_00001
PJQ5466A1_R2_00001
Panjit
60V N-CHANNEL ENHANCEMENT MODE M
DMN2024LCA4-7
DMN2024LCA4-7
Diodes Inc.
MOSFET BVDSS: 8V~24V X4-DSN1313-
AUIRF7313Q
AUIRF7313Q
Infineon
MOSFET 2N-CH 30V 6.9A 8SOIC