KD2306
RoHS

KD2306

Part NoKD2306
ManufacturerVBsemi
Description-
Datasheet Download Now!
ECAD Module KD2306
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)30mu03a9@10V,3.2A
Power Dissipation (Pd)1.7W
Gate Threshold Voltage (Vgs(th)@Id)1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)17pF@15V
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)335pF@15V
Total Gate Charge (Qg@Vgs)2.1nC@4.5V
Operating Temperature-55u2103~+150u2103@(Tj)
In Stock: 6822
Pricing
QTY UNIT PRICE EXT PRICE
1 0.0189
10 0.0185
100 0.0179
1000 0.0174
10000 0.0166
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
FQD3N40TM
FQD3N40TM
onsemi
MOSFET N-CH 400V 2A DPAK
IXTH6N100D2
IXTH6N100D2
IXYS
MOSFET N-CH 1000V 6A TO247
HUF76013P3
HUF76013P3
onsemi
MOSFET N-CH 20V 20A TO220-3
DMNH6009SPS-13
DMNH6009SPS-13
Diodes Inc.
MOSFET BVDSS: 41V~60V POWERDI506
IXFX26N100P
IXFX26N100P
IXYS
MOSFET N-CH 1000V 26A PLUS247-3
PJD95P04E-AU_L2_006A1
PJD95P04E-AU_L2_006A1
Panjit
40V P-CHANNEL ENHANCEMENT MODE M
MRF101AN
MRF101AN
NXP Semiconductors
RF MOSFET LDMOS 50V TO220-3
IXFA3N80
IXFA3N80
IXYS
MOSFET N-CH 800V 3.6A TO263
SQJA61EP-T1_GE3
SQJA61EP-T1_GE3
Vishay Siliconix
MOSFET P-CHANNEL 60V 50A TO263