ME2310
RoHS

ME2310

Part NoME2310
ManufacturerVBsemi
Description-
Datasheet Download Now!
ECAD Module ME2310
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)30mu03a9@10V,3.2A
Power Dissipation (Pd)1.7W
Gate Threshold Voltage (Vgs(th)@Id)1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)17pF@15V
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)335pF@15V
Total Gate Charge (Qg@Vgs)2.1nC@4.5V
Operating Temperature-55u2103~+150u2103@(Tj)
In Stock: 12035
Pricing
QTY UNIT PRICE EXT PRICE
1 0.082
10 0.081
100 0.08
1000 0.08
10000 0.07
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
NVTFWS030N06CTAG
NVTFWS030N06CTAG
onsemi
MOSFET N-CH 60V 6A/19A 8WDFN
SSM3J352F,LF
SSM3J352F,LF
TOSHIBA
MOSFET P-CH 20V 2A S-MINI
MRF282SR1
MRF282SR1
NXP Semiconductors
RF MOSFET LDMOS 26V NI200
SI1305DL-T1-GE3
SI1305DL-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 0.86A SC-70-3
AOB412L
AOB412L
Alpha & Omega Semiconductor
MOSFET N-CH 100V 8.2A/60A TO263
SI7141DP-T1-GE3
SI7141DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 60A PPAK SO-8
PJP60R980E_T0_00001
PJP60R980E_T0_00001
Panjit
600V N-CHANNEL SUPER JUNCTION MO