NCE30H12K
RoHS

NCE30H12K

Part NoNCE30H12K
ManufacturerVBsemi
Description-
Datasheet Download Now!
ECAD Module NCE30H12K
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.31mu03a9@10V,38.8A
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)970pF@15V
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)6.201nF@15V
Total Gate Charge (Qg@Vgs)81.5nC@4.5V
Operating Temperature-55u2103~+175u2103@(Tj)
In Stock: 25346
Pricing
QTY UNIT PRICE EXT PRICE
1 0.071
10 0.0696
100 0.0675
1000 0.0653
10000 0.0625
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
NPT25015D
NPT25015D
MACOM
RF MOSFET HEMT 28V 8SOIC
2N7002K-EVL-CT
2N7002K-EVL-CT
Venkel
MOSFET Single,SOT-23,60V,300mA,N
APT40M70JVFR
APT40M70JVFR
Microsemi
MOSFET N-CH 400V 53A ISOTOP
AUIRF7640S2TR
AUIRF7640S2TR
Infineon
MOSFET N-CH 60V 5.8A DIRECTFET
IXFK16N90Q
IXFK16N90Q
IXYS
MOSFET N-CH 900V 16A TO264AA
FQPF12N60
FQPF12N60
onsemi
MOSFET N-CH 600V 5.8A TO220F
PCC420AR-10-R6
PCC420AR-10-R6
Amphenol
4-20MA SENSOR WITH RMS ACCELERAT
G60N04K
G60N04K
Goford Semiconductor
MOSFET N-CH 40V 60A TO-252
STBGS002N06C
STBGS002N06C
onsemi
POWER MOSFET, 60 V, 2.2 M?, 211