IRF510L
Part NoIRF510L
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 5.6A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C5.6A (Tc)
DriveVoltage(MaxRdsOn540mOhm @ 3.4A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id8.3 nC @ 10 V
Vgs180 pF @ 25 V
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-262-3
OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA
MountingType-
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
6971
Pricing
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Associated Product
