IRF510PBF-BE3
Part NoIRF510PBF-BE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 5.6A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C5.6A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)540mOhm @ 3.4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs8.3 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)180 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature43W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2900
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0908 | |
| 10 | 1.069 | |
| 100 | 1.0363 | |
| 1000 | 1.0035 | |
| 10000 | 0.9599 |
Associated Product
