IRF610
Part NoIRF610
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 3.3A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs8.2 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)140 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature36W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20534
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Associated Product
