IRF630L
Part NoIRF630L
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 9A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn400mOhm @ 5.4A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id43 nC @ 10 V
Vgs800 pF @ 25 V
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)I2PAK
OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA
MountingType10V
SupplierDevicePackage±20V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
2690
Pricing
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Associated Product
