IRF9Z10PBF-BE3
RoHS

IRF9Z10PBF-BE3

Part NoIRF9Z10PBF-BE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 60V 6.7A TO220AB
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ECAD Module IRF9Z10PBF-BE3
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C6.7A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)500mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)270 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature43W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3440
Pricing
QTY UNIT PRICE EXT PRICE
1 1.6224
10 1.59
100 1.5413
1000 1.4926
10000 1.4277
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product