IRFB9N60A
Part NoIRFB9N60A
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 9.2A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C9.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)750mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs49 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature170W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
17506
Pricing
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Associated Product
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