IRFB9N65A
Part NoIRFB9N65A
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 8.5A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C8.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)930mOhm @ 5.1A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1417 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature167W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
19169
Pricing
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Associated Product
