IRFBE30L

Part NoIRFBE30L

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 4.1A I2PAK

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)800 V

Current-ContinuousDrain(Id)@25°C4.1A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)3Ohm @ 2.5A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs78 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)1300 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature125W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI2PAK

SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 11734
available for immediate sale in a store

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