IRFBE30L
Part NoIRFBE30L
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 4.1A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C4.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3Ohm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs78 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
11734
Pricing
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Associated Product
