IRFBG30PBF-BE3
Part NoIRFBG30PBF-BE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 1000V 3.1A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C3.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5Ohm @ 1.9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs80 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)980 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4580
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1894 | |
| 10 | 2.1456 | |
| 100 | 2.0799 | |
| 1000 | 2.0142 | |
| 10000 | 1.9267 |
Associated Product
