IRFD123PBF
Part NoIRFD123PBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 1.3A 4DIP
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C1.3A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)270mOhm @ 780mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)360 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.3W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7237
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1039 | |
| 10 | 1.0818 | |
| 100 | 1.0487 | |
| 1000 | 1.0156 | |
| 10000 | 0.9714 |
Associated Product
