IRFD213
Part NoIRFD213
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 250V 450MA 4DIP
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C450mA (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)2Ohm @ 270mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs8.2 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs(Max)140 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8002
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6848 | |
| 10 | 0.6711 | |
| 100 | 0.6506 | |
| 1000 | 0.63 | |
| 10000 | 0.6026 |
Associated Product
