IRFD224
Part NoIRFD224
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 250V 630MA 4DIP
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C630mA (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.1Ohm @ 380mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs14 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)260 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
10550
Pricing
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Associated Product
