IRFDC20PBF
Part NoIRFDC20PBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 320MA 4DIP
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C320mA (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.4Ohm @ 190mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7003
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9838 | |
| 10 | 1.9441 | |
| 100 | 1.8846 | |
| 1000 | 1.8251 | |
| 10000 | 1.7457 |
Associated Product
