IRFI640GPBF
Part NoIRFI640GPBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 9.8A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9.8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 5.9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs70 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature40W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16175
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.5546 | |
| 10 | 2.5035 | |
| 100 | 2.4269 | |
| 1000 | 2.3502 | |
| 10000 | 2.248 |
Associated Product
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