IRFI820G
Part NoIRFI820G
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 2.1A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C2.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3Ohm @ 1.3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)360 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature30W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
11470
Pricing
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Associated Product
