IRFSL11N50A
Part NoIRFSL11N50A
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 11A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)550mOhm @ 6.6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs51 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1426 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature190W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
11417
Pricing
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Associated Product
