IRLD024PBF
Part NoIRLD024PBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 2.5A 4DIP
Datasheet
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C2.5A (Ta)
DriveVoltage(MaxRdsOn4V, 5V
MinRdsOn)100mOhm @ 1.5A, 5V
RdsOn(Max)@Id2V @ 250µA
Vgs18 nC @ 5 V
Vgs(th)(Max)@Id±10V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.3W (Ta)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperature4-HVMDIP
MountingType4-DIP (0.300, 7.62mm)
SupplierDevicePackage870 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10436
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.5604 | |
10 | 1.5292 | |
100 | 1.4824 | |
1000 | 1.4356 | |
10000 | 1.3732 |