IRLI640GPBF
Part NoIRLI640GPBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 9.9A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9.9A (Tc)
DriveVoltage(MaxRdsOn4V, 5V
MinRdsOn)180mOhm @ 5.9A, 5V
RdsOn(Max)@Id2V @ 250µA
Vgs66 nC @ 10 V
Vgs(th)(Max)@Id±10V
Vgs(Max)1800 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature40W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14905
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.1137 | |
| 10 | 3.0514 | |
| 100 | 2.958 | |
| 1000 | 2.8646 | |
| 10000 | 2.7401 |
Associated Product
