SI1011X-T1-GE3
Part NoSI1011X-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V SC89-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C480mA (Ta)
DriveVoltage(MaxRdsOn1.2V, 4.5V
MinRdsOn)640mOhm @ 400mA, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs±5V
Vgs(th)(Max)@Id-
Vgs(Max)190mW (Ta)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)SC-89-3
OperatingTemperatureSC-89, SOT-490
MountingType4 nC @ 4.5 V
SupplierDevicePackage62 pF @ 6 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6330
Pricing
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Associated Product
