SI1050X-T1-GE3
RoHS

SI1050X-T1-GE3

Part NoSI1050X-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 8V 1.34A SC89-6
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ECAD Module SI1050X-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C1.34A (Ta)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)86mOhm @ 1.34A, 4.5V
RdsOn(Max)@Id900mV @ 250µA
Vgs11.6 nC @ 5 V
Vgs(th)(Max)@Id±5V
Vgs(Max)585 pF @ 4 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature236mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseSC-89 (SOT-563F)
GateCharge(Qg)(Max)@VgsSOT-563, SOT-666
Grade
Qualification
In Stock: 18967
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4704
10 0.461
100 0.4469
1000 0.4328
10000 0.414
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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