SI1051X-T1-GE3
Part NoSI1051X-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 8V 1.2A SC89-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C1.2A (Ta)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)122mOhm @ 1.2A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs9.45 nC @ 5 V
Vgs(th)(Max)@Id±5V
Vgs(Max)560 pF @ 4 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature236mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSC-89 (SOT-563F)
SupplierDevicePackageSOT-563, SOT-666
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7944
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Associated Product
