SI1058X-T1-GE3
Part NoSI1058X-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V SC89-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C1.3A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)91mOhm @ 1.3A, 4.5V
RdsOn(Max)@Id1.55V @ 250µA
Vgs5.9 nC @ 5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)380 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature236mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSC-89 (SOT-563F)
SupplierDevicePackageSOT-563, SOT-666
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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10667
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Associated Product
